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© 2005 m2k-laser
Principle drawing of a
tapered diode with ridge-waveguide and taper section.
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Tapered Laser Concept
Tapered diode lasers combine a nearly diffraction limited beam quality with
output powers which have previously only been available for diode lasers
with broad-area design. To achieve these characteristics, the lateral design
consists of a taper and a ridge-waveguide section. High beam quality is made
possible via an index-guided ridge-waveguide or MESA structure. In contrast,
high output power requires a gain-guided broad pumped area which leads to a
taper section.
Tapered Amplifiers for MOPA Setups (TA)
GaAs based tapered amplifiers (TA) can be used for the amplification of an
existing seed laser. The seed power between 15mW and 30mW can be amplified
up to nearly diffraction limited power values of 2000mW. Such a setup is called
MOPA (Master Oszillator Power Amplifier) system. The rear facet and the
front facet are both provided with an anti-reflection coating of less than
0.01% to avoid laser action of the amplifier chip itself.
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Applications
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Raman- and absorption spectroscopy
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High resolution absorption spectroscopy
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Optical cooling and traps for Bose-Einstein Condensation
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Tapered Amplifiers for External Cavity Setups (TAL)
GaAs based tapered amplifiers (TAL) can be also used in external resonator
configurations to combine nearly diffraction limited output power values up
to 2000mW with small spectral line widths and high side mode suppression
ratios. Their rear facets are provided with an highly anti-reflection
coating of less than 0.01% to guarantee good coupling to the grating.
The front facets are provided with an anti-reflection coating in the
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Applications
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Raman- and absorption spectroscopy
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frequency conversion
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Tapered Lasers (TL)
By using a high reflection coating on the rear facet of tapered diodes,
tapered lasers can be realized. Tapered lasers offer high output powers
up to 5W and highly effective fiber coupling into small fibers down to
single-mode fibers due to their high brightness of several 100MW/cm2.
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Applications
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Printing and Marking
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Fiber Coupled Modules
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Pumping of Raman and Fiber Lasers
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Characteristics
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Wavelength regime between
755 nm and 1064 nm
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Amplification of seed laser up to 2000 mW
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For external cavity setups up to 2000 mW
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Nearly diffraction limited behavior
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Wide tuning range
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ASE suppression > 40 dB
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Applications
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Amplifier for MOPA and external cavity setups
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Raman- and absorption spectroscopy
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High resolution absorption spectroscopy
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Optical cooling and traps for Bose-Einstein condensation
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Frequency conversion
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More information
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Data sheets
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Heat sinks
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Publications
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Safety instructions
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